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功率(Pd):500mW 集射极击穿电压(Vceo):80V 集电极电流(Ic):1A
PNP power transistors in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plastic
package.
• High collector current capability IC and ICM
• Three current gain selections
• High power dissipation capability
• AEC-Q101 qualified • Linear voltage regulators
• MOSFET drivers
• High-side switches
• Power management
• Amplifiers